![shallow trench isolation半導体](https://host.easylife.tw/files/RiotIsolator.png)
淺槽隔離,即shallowtrenchisolation,簡稱STI。通常用於0.25um以下工藝,通過利用氮化硅掩膜經過澱積、圖形化、刻蝕硅後形成槽,並在槽中填充澱積氧化物, ...,由嚴永民著作·2011—ShallowTrenchIsolation(STI)techniquesareessentialforsemiconductordeviceforredu...
淺溝渠元件隔離技術現況與挑戰
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2.LauraPeters,“ChoicesandChallengesforShallow.TrenchIsolation”,SemiconductorInternational,.April,1999.3.J.Gagliardi,R.Webb,C.Rueb,G.Menk, ...
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